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The domestic third-generation semiconductor welcome window period this year, the output value of gallium nitride and silicon carbide may reach 7 billion yuan

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China’s third-generation semiconductors are ushering in a window of development. Wu Ling, chairman of the third-generation semiconductor industry technology innovation strategic alliance, revealed at the 2020 International Third-generation Semiconductor Forum on November 24 that the dual-cycle model promotes localization and substitution. In 2020, China’s SiC (silicon carbide), GaN (gallium nitride) ) The output value of power electronics and microwave radio frequency is expected to be about 7 billion yuan.

Among them, the output value of China’s GaN microwave radio frequency industry will reach 3.375 billion yuan in 2020, an increase of 29% over last year’s 2.615 billion yuan; the output value of SiC and GaN power electronics industries will reach 3.535 billion yuan in 2020, an increase of 2.903 billion yuan from last year. An increase of 21.77%.

On the other hand, the market scale is expanding, and 5G accelerates the rapid growth of GaN radio frequency applications. In 2020, the market size of China’s GaN radio frequency devices is about 17 billion yuan; new energy vehicles and consumer electronics have become breakthroughs. In 2020, China’s power Electronic device application market size is 5.82 billion yuan. Yuan.

Wu Ling suggested to explore the construction of the third-generation semiconductor industry innovation ecology, explore “platform + incubator + fund + base” and a new model for the integration and development of large and medium-sized enterprises, strengthen precise international and regional in-depth cooperation, and work together to make the whole chain enter the world. Column first.

Next year will be the first year of GaN fast charging

Gallium Nitride (GaN) has attracted much attention since Xiaomi launched a fast-charging product using related materials this year. As a domestic enterprise that has mass-produced silicon-based gallium nitride, Luo Weiwei, chairman of Innosec Technology Co., Ltd., said at the above forum that the third-generation semiconductor gallium nitride has the advantages of small size, low energy consumption, and high-frequency operation. Adapt to the market demand of larger bandwidth, higher operating frequency, high current and low loss.

With the rapid development of AI, data centers, 5G, new energy vehicles, DC power supply, etc., power semiconductors will usher in rapid growth, and the compound growth rate is expected to exceed 10% from 2020 to 2025. Luo Weiwei said that the main growth of power semiconductors in the future will focus on the third-generation semiconductors, and the voltage levels will mainly focus on 30 volts, 150 volts, 650 volts, and 900 volts.

Innosec was established in 2015, and the construction of the Suzhou factory was completed in September 2020, and its shipments of high- and low-voltage chips reached millions. Luo Weiwei believes that the industrialization technology of gallium nitride power semiconductors has matured, and the market has begun to explode. At present, Innoseco’s mass-produced products are 8-inch silicon-based gallium nitride, covering from 30 volts to 650 volts.

5G base stations and data centers in China’s new infrastructure will bring new demands. Luo Weiwei said that the current chip price of silicon-based gallium nitride is 1.5 times that of silicon devices, and it is expected that the price of silicon devices will be the same or even lower in the next few years. Therefore, it has great potential for development in the field of consumer electronics, covering electronic cigarettes, smartphones, wireless chargers, sweeping robots, drones, laptops, and electric bicycles.

According to the statistics of charging head network, in the smartphone industry, Huawei, Xiaomi, OPPO, Meizu, Samsung, Nubia, realme and other brands have launched GaN fast charging products. In terms of e-commerce, there are currently 17 brands that have launched dozens of new GaN fast charging products. More than 100 power supply manufacturers have shipped.

“2021 will be the first year of GaN fast charging.” Luo Weiwei predicts that the shipment of GaN fast charging will reach 10 million in 2020, and the shipment of GaN fast charging will increase by more than ten times in 2021, reaching 150-200 million Piece. In addition, the application of GaN power chips in mobile phones will enable smart phones to have higher efficiency, higher dynamic response and smaller power supply area.

The application range of gallium nitride is not only in consumer electronics fields such as fast charging and smartphones, but also in industrial fields such as data centers and flexible power supply, as well as in automotive fields such as autonomous driving and on-board chargers. For example, low-voltage gallium nitride can be applied to a new generation of big data centers to reduce footprint, increase power, and reduce energy consumption.

Facing competitors such as TSMC, Infineon, EPC, and Navitas, Chinese gallium nitride companies hope to seize the development window period and rapidly increase production capacity. Luo Weiwei revealed that Innosecco’s business includes chip design, material epitaxy production, chip manufacturing, and reliability analysis. Its Zhuhai factory has a monthly production capacity of 4,000 chips, and its Suzhou factory has a monthly production capacity of 65,000 chips. 6 years of mass production.

At present, many domestic enterprises and institutions are improving the localization ecosystem of gallium nitride to realize the independent and controllable industrial chain: gallium nitride packaging and testing systems include Huatian Technology, Changdian Technology, Carsem; magnetic materials There are TDG (Tiantong Holdings), DMEGC (East Magnetic); drivers and controllers include Dongke Semiconductor, JOULWATT (Jiehuat Microelectronics), etc.; testing systems include University of Electronic Science and Technology of China, China Saibao Laboratory, etc.

Electric Vehicles Drive Silicon Carbide Market Explosion

Another important product of the third-generation semiconductor, silicon carbide, will benefit from the rapid growth of the electric vehicle industry and usher in an explosive opportunity.

Wang Yonggang, CEO and founding partner of Anxin Investment Management Co., Ltd., said at the above forum that the development direction of silicon carbide from 2018 to 2024 is the new energy vehicle market, with a compound annual growth rate of 29%. The total SiC device market is expected to reach $1.5 billion in 2023.

In 2017, the proportion of electric vehicles was only 3%, and by 2040, it is expected to reach 50%. The share of electric vehicles will increase rapidly over the next two decades. Even if you only look at the next five years, the electric vehicle market will increase substantially.

Silicon carbide devices are mainly suitable for pure electric vehicles, so silicon carbide devices will coexist with silicon devices for a long time. Hamada Gongshou said that in pure electric vehicles, the solution using silicon carbide devices would be $300 more expensive. By 2025, battery costs for 300 kilometers are expected to be around $10,000, and a 3% increase in battery efficiency would reduce battery costs by $300, and the savings would more than offset the increase.

In the silicon carbide (SiC) global industry map, the substrate field includes Nippon Steel Group, Tianke Heda, Hebei Tongguang and Tyco Tianrun under Tongguang Crystal; the epitaxy field includes Han Tiancheng, Dongguan Tianyu, Showa Denko; In the design field, there are Chuangneng Power (APS Hong Kong team), Shanghai Zhanxin Electronics, etc. This year, Sanan Optoelectronics acquired Nortel New Materials to master upstream silicon carbide materials.

Looking forward to the future of China’s third-generation semiconductor industry, Wu Ling predicts that by 2025, the localization rate of GaN radio frequency devices required for 5G communication base stations will reach 80%; third-generation semiconductor power devices will be used in high-speed trains, new energy vehicles, Large-scale applications in industrial motors, smart grids and other fields; the industrialization of materials and chips such as Mini/Micro LED and deep ultraviolet can realize innovative applications in the fields of health care, public safety, and information interaction. By 2030, 1 to 3 world-class leading enterprises will be formed in China, driving the output value to exceed 3 trillion yuan and saving 1 trillion kilowatt-hours of electricity annually.

The Links:   LB064V02-B1 AT-25010B-XHL-T

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